?2013 fairchild semiconductor corporation 1 www.fairchildsemi.com rurg5060_f085 rev. c1 rurg5060_f085 50a, 600v ultrafast rectifier november 2013 rurg5060_f085 50a, 600v ultrafast rectifier features ? high speed switching ( t rr =70ns(typ.) @ i f =50a ) ? low forward voltage( v f =1.6v(max.) @ i f =50a ) ? avalanche energy rated ? aec-q101 qualified applications ? automotive dcdc converter ? automotive on board charger ? switching power supply ? power switching circuits 50a, 600v ultrafast rectifier the rurg5060_f085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). it has low forward voltage drop and is silicon nitride passivated ion- implanted epitaxial planar construction. this device is intended for use as a freewheeling/clamp- ing diode and rectifier in a variety of switching power supplies and other power switching applications. its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. pin assignments 1. cathode 2. anode to-247-2l 1 1. cathode 2. anode 2 absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics t c = 25c unless otherwise noted package marking and ordering information symbol parameter ratings units v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 25 c50a i fsm non-repetitive peak surge current (halfwave 1 phase 50hz) 150 a e avl avalanche energy (1.4a, 40mh) 40 mj t j, t stg operating junction and storage temperature - 55 to +175 c symbol parameter max units r jc maximum thermal resistance, junction to case 0.4 c/w r ja maximum thermal resistance, junction to ambient 45 c/w device marking device package tube quantity rurg5060 rurg5060_f085 to-247 - 30
2 www.fairchildsemi.com rurg5060_f085 rev. c1 rurg5060_f085 50a, 600v ultrafast rectifier electrical characteristics t c = 25c unless otherwise noted notes: 1. pulse : test pulse width = 300 s, duty cycle = 2% 2. guaranteed by design test circuit and waveforms symbol parameter conditions min. typ. max units i r instantaneous reverse current v r = 600v t c = 25 c - - 250 ua t c = 175 c- - 2 ma v fm 1 instantaneous forward voltage i f = 50a t c = 25 c t c = 175 c - - 1.28 1.09 1.6 1.4 v v t rr 2 reverse recovery time i f =1a, di/dt = 100a/ s, v cc = 390v t c = 25 c - 42 65 ns i f =50a, di/dt = 100a/ s, v cc = 390v t c = 25 c t c = 175 c - - 70 285 90 - ns ns t a t b q rr reverse recovery time reverse recovery charge i f =50a, di/dt = 100a/ s, v cc = 390v t c = 25 c- - - 36 34 112 - - - ns ns nc e avl avalanche energy i av =1.4a,l = 40mh 40 - - mj figure 5. t rr test circuit figure 6. t rr waveforms and definitions figure 7. avalanche energy test circuit figure 8. avalanche current and voltage waveforms r g l v dd igbt current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i = 1.4a l = 40mh iv t 0 t 1 t 2 i l v avl t i l
3 www.fairchildsemi.com rurg5060_f085 rev. c1 rurg5060_f085 50a, 600v ultrafast rectifier typical performance characteristics figure 1. typical forward voltage drop vs. forward current figure 2. typical reverse current vs. reverse voltage figure 3.typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery current vs. di/dt figure 6. forward current derating curve 0.1 0.5 1.0 1.5 2.0 0.1 1 10 100 t c = 125 o c t c = 175 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 400 0 100 200 300 400 500 600 1e -4 1e -3 0.0 1 0.1 1 10 10 0 1000 t c = 175 o c t c = 25 o c t c = 125 o c reverse current , i r [ a] reve rs e v oltage, v r [v] 0.1 1 10 100 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 capacitances , cj [pf] typical capacitance at 10v = 168pf re vers e volta ge , v r [v] 100 200 300 400 500 0 50 10 0 15 0 20 0 25 0 30 0 t c = 175 o c i f = 50a t c = 25 o c t c = 125 o c reverse recovery time, t rr [ns] di/dt [a/ s] 10 0 200 3 00 400 500 0 15 30 45 t c = 125 o c i f = 50a t c = 25 o c t c = 175 o c reverse recovery current, i rr [a] di/dt [a/ s] 25 50 75 10 0 1 25 1 50 1 75 0 50 100 150 average forward current, i f(av) [a] ca se temperature, t c [ o c]
4 www.fairchildsemi.com rurg5060_f085 rev. c1 rurg5060_f085 50a, 600v ultrafast rectifier typical performance characteristics (continued) figure 7. reverse recovery charge figure 8. transient thermal response curve 100 2 00 300 4 00 50 0 0 500 100 0 150 0 200 0 250 0 300 0 350 0 t c = 175 o c i f = 50a t c = 25 o c t c = 125 o c reverse recovery charge, q rr [nc] di/dt [a/ s] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.01 0.1 1 * notes : 1. z thjc (t) = 0.4 o c/ w typ. 2. duty factor , d =t 1 /t 2 3. t jm - t c = p dm * z thjc (t) single pulse d=0.5 0.02 0. 2 0.05 0.1 0.01 z thjc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com rurg5060_f085 rev. c1 rurg5060_f085 50a, 600v ultrafast rectifier mechanical dimensions dimensions in millimeters to-247-2l
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